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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D737
BGF844 GSM800 EDGE power module
Product specification Supersedes data of 2003 Feb 26 2003 Jun 06
Philips Semiconductors
Product specification
GSM800 EDGE power module
FEATURES * Typical GSM EDGE performance at a supply voltage of 26 V: - Output power = 2.5 W - Gain = 30 dB - Efficiency = 16% - ACPR < -65 dBc at 400 kHz - rms EVM < 0.4% - peak EVM < 1.2% * Low distortion to a GSM EDGE signal * Excellent 2-tone performance * Low die temperature due to copper flange * Integrated temperature compensated bias * 50 input/output impedance * Flat gain over frequency band. APPLICATIONS * Base station RF power amplifiers in the 869 to 894 MHz frequency range * GSM, GSM EDGE, multi carrier applications * Macrocell (driver stage) and Microcell (final stage). DESCRIPTION 23 W LDMOS power amplifier module for base station amplifier applications in the 869 to 894 MHz band. QUICK REFERENCE DATA Typical RF performance at Tmb = 25 C. MODE OF OPERATION CW GSM EDGE Note 1. ACPR 400 kHz at 30 kHz resolution bandwidth. f (MHz) 869 to 894 869 to 894 VS (V) 26 26 PL (W) 23 2.5 Gp (dB) 29 30 (%) 50 16 ACPR (dBc) - -65(1) Fig.1 Simplified outline.
Top view 1 23
BGF844
PINNING - SOT365C PIN 1 2 3 Flange RF input VS RF output ground DESCRIPTION
MBL257
rms EVM (%) - 0.4
2003 Jun 06
2
Philips Semiconductors
Product specification
GSM800 EDGE power module
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VS PD PL Tstg Tmb DC supply voltage input drive power load power storage temperature operating mounting base temperature PARAMETER - - - -30 -20 MIN. 30 100 27 +100 +90 MAX.
BGF844
UNIT V mW W C C
CHARACTERISTICS Tmb = 25 C; VS = 26 V; PL = 2.5 W; f = 869 to 894 MHz; ZS = ZL = 50 ; unless otherwise specified. SYMBOL IDQ Gp Gp freq Gp pwr GOB VSWRin IMDr PARAMETER quiescent current (pin 2) power gain gain flatness over frequency range gain flatness over power band PL = 25 mW up to 2.5 W out of band gain input VSWR reverse intermodulation fi = fc 200 kHz; Pcarrier = 2.5 W; Pinterference = -40 dBc; small signal, PD = 0 dBm; f < 869 MHz, f > 894 MHz CONDITIONS PD = 0 mW MIN. 245 28 - -0.8 - - - TYP. 280 30 0.2 -0.2 - 1.6 : 1 -67 32 1 +0.2 MAX. 320 UNIT mA dB dB dB
GPi max + 1 dB note 1 2:1 -64 dBc
H2 H3
second harmonic third harmonic stability ruggedness VSWR 3 : 1 through all phases; VS2 = 25 to 28 V VSWR = 10 : 1 through all phases; PL = 5 W
- -
-38 -61
-34 -58
dBc dBc
all spurious outputs more than 60 dB below desired signal no degradation in output power
EDGE (PL = 2.5 W average) SR200 SR400 SR600 EVMrms EVMM rms EDGE signal distortion peak EDGE signal distortion efficiency spectral regrowth; EDGE GSM signal 200 kHz 400 kHz 600 kHz 13 - - - - - - - - 16 -36 -65 -75 0.4 1.2 -45 -52 -60 - -35 -63 -73 1.2 4 - - - % dBc dBc dBc % %
Intermodulation distortion (PL = 2.5 W average) d3 d5 d7 Note 1. GPi is small signal in-band gain. 2003 Jun 06 3 third order intermodulation fifth order intermodulation seventh order intermodulation carrier spacing = 200 kHz dBc dBc dBc
Philips Semiconductors
Product specification
GSM800 EDGE power module
BGF844
MBL772
handbook, halfpage
30
48 (%) 36 Gp
handbook, halfpage
Gp (dB) 29.6
-58 ACPR (dBc) -60
MBL773
-62
29.2 24
-64
28.8 12
-66
28.4 0 4 8 12 16 20 PL (AV)(W)
0
-68
0
2
4
6
8
10 12 PL (AV) (W)
Fig.3
f = 882 MHz. f = 882 MHz.
Fig.2
GSM EDGE power gain and efficiency as functions of load power; typical values.
Fig.3
GSM EDGE ACPR at 400 kHz as a function of load power; typical values.
handbook, halfpage
4
MBL774
handbook, halfpage
EVM (%) 3
12 EVM (%) 10
MBL775
8
2
6
4 1 2
0 0 2 4 6 8 10 PL (AV) (W) 12
0 0 2 4 6 8 10 12 PL (AV) (W)
f = 882 MHz.
f = 882 MHz.
Fig.4
GSM EDGE rms EVM as a function of average load power; typical values.
Fig.5
GSM EDGE peak EVM as function of average load power; typical values.
2003 Jun 06
4
Philips Semiconductors
Product specification
GSM800 EDGE power module
BGF844
MBL776
handbook, halfpage
30.4 Gp (dB) 30
60 (%) 48
handbook, halfpage
30
MBL777
48 (%) 36
Gp (dB) 29.6
29.6
36
Gp 29.2 24
29.2
Gp
24
28.8
28.8 12
12
28.4 0 8 16 24 PL (W) 32
0
28.4 0 4 8 12 PL (W) 16
0
f = 882 MHz.
f1 = 882 MHz; f2 = 883 MHz.
Fig.6
CW gain power and efficiency as functions of load power; typical values.
Fig.7
Two tone gain power and efficiency as functions of load power; typical values.
handbook, halfpage
-20
MBL778
dim (dBc)
handbook, halfpage
30
MBL779
s21 (dB)
-30
d3 d5
28 s11 26
s21 s11
0 s11 (dB) -6
-40
-12
-50
24
-18
-60
d7
22
-24
-70
0
4
8
12 16 PL (AV) (W)
20 750
850
950
f (kHz)
-30 1050
f1 = 882 MHz; f2 = 883 MHz.
Fig.8
Two tone intermodulation distortion as a function of average load power; typical values.
Fig.9 s-parameters as a function of frequency.
2003 Jun 06
5
Philips Semiconductors
Product specification
GSM800 EDGE power module
MOUNTING RECOMMENDATIONS General LDMOST base station modules are manufactured with the dies directly mounted onto a copper flange. The matching and bias circuit components are mounted on a printed-circuit board (PCB), which is also soldered onto the copper flange. The dies and the PCB are encapsulated in a plastic cap, and pins extending from the module provide a means of electrical connection. This construction allows the module to withstand a limited amount of flexing, although bending of the module is to be avoided as much as possible. Mechanical stress can occur if the bottom surface of the module and the surface of the amplifier casing (external heatsink) are not mutually flat. This, therefore, should be a consideration when mounting the module in the amplifier. Another cause of mechanical stress can arise from thermal mismatch after soldering of the pins. Precautions should be taken during soldering, and efforts made to ensure a good thermal contact between the flange and the external heatsink. External heatsink (amplifier casing) The module should always be mounted on a heatsink with a low thermal resistance to keep the module temperature as low as possible. The mounting area of the heatsink should be flat and free from burrs and loose particles. We recommend a flatness for the mounting area of between 50 m concave and 50 m convex. The 50 m concave value is to ensure optimal thermal behaviour, while the 50 m convex value is intended to limit mechanical stress due to bending. In order to ensure optimal thermal behaviour, the use of thermal compound is recommended when mounting the module onto the amplifier external heatsink. The following recommended thermal compounds have a thermal conductivity of >0.5 W/mK: * WPS II (silicone-free) from Austerlitz-Electronics * Comp. Trans. from KF * 340 from Dow Corning * Trans-Heat from E. Friis-Mikkelsen. The use of thermal pads instead of thermal compound is not recommended as the pads may not maintain a uniform flatness over a period of time. Mounting PREPARATION Ensure that the surface finishes are free from burrs, dirt and grease. 2003 Jun 06 6 CAUTION
BGF844
During the following procedures ESD precautions should be taken to protect the device from electrostatic damage. PROCEDURE 1. Apply a thin, evenly spread layer of thermal compound to the module flange bottom surface. Excessive use of thermal compound may result in increased thermal resistance and possible bending of the of the flange. Too little thermal compound will result in an increase in thermal resistance. 2. Take care that there is some space between the cap and the PCB. Bring the module into contact with the external heatsink casing, ensuring that there is sufficient space for excessive thermal compound to escape. 3. Carefully align the module with the heatsink casing mounting holes, and secure with two 3 mm bolts and two flat washers. Initially tighten the bolts to "finger tight" (approximately 0.05 Nm). Using a torque wrench, tighten each bolt in alternating steps to a final torque of 0.4 Nm. 4. After the module is secured to the casing, the module leads may be soldered to the PCB. The leads are for electrical connection only, and should not be used to support the module at any time in the assembly process. A soldering iron may be used up to a temperature of 250 C for a maximum of 10 seconds. Avoid contact between the soldering iron and the plastic cap. Electrical connections The main ground path of all modules is via the flange. It is therefore important that the flange is well grounded and that return paths are kept as short as possible. An incorrectly grounded flange can result in a loss of output power or in oscillation. The RF input and output of the module are designed for 50 connections. Incoming inspection When incoming inspection is performed, use a properly designed test fixture to avoid excessive mechanical stress and to ensure optimal RF performance. Philips can deliver dedicated test fixtures on request.
Philips Semiconductors
Product specification
GSM800 EDGE power module
APPLICATION INFORMATION
BGF844
handbook, halfpage
TEMPERATURE COMPENSATED GATE BIAS
C1 C2 C3 C4 +
Z1
R1
L1 Z2
C5
50 input
VS
MBL781
50 output
Fig.10 Test circuit.
List of components (see Figs 10 and 11) COMPONENT C1, C3 C2, C5 C4 L1 R1 Z1, Z2 Note 1. The striplines are on a double copper-clad printed-circuit board (RO5880) with r = 2.2 and thickness = 0.79 mm. DESCRIPTION multilayer X7R ceramic chip capacitor tantalum SMD capacitor electrolytic capacitor grade 4S2 Ferroxcube bead metal film resistor stripline; note 1 10 ; 0.4 W 50 VALUE 100 nF; 50 V 10 F; 35 V 100 F; 35 V 4330 030 36300 2322 195 13109 CATALOGUE NUMBER
2003 Jun 06
7
Philips Semiconductors
Product specification
GSM800 EDGE power module
BGF844
handbook, full pagewidth
90
42
C5 R1 L1
output 50
C4 Z2 C3 C2 C1 Z1
input 50
DUT
MBL780
Dimensions in mm.
Fig.11 Printed-circuit board and component layout.
2003 Jun 06
8
Philips Semiconductors
Product specification
GSM800 EDGE power module
PACKAGE OUTLINE
BGF844
Plastic rectangular single-ended flat package; flange mounted; 2 mounting holes; 3 in-line leads
SOT365C
D
A F y
U q U3 A
U2 E p U1
L
1
b e1
2
3
wM vA Q c
e
Z
0
10 scale
20 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 9.5 9.0 b 0.56 0.46 c 0.3 0.2 D 30.1 29.9 E 18.6 18.4 e e1 F 3.3 3.1 L 3.7 3.3 p 3.55 3.45 Q 4.0 3.8 q U U1 15.4 15.2 U2 7.75 7.55 U3 1.1 0.0 v 0.3 w 0.25 y 0.1 Z 12.8 12.6
2.54 20.32
41.75 48.4 41.65 48.0
OUTLINE VERSION SOT365C
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 01-06-06 02-11-13
2003 Jun 06
9
Philips Semiconductors
Product specification
GSM800 EDGE power module
DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION
BGF844
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
II
Preliminary data Qualification
III
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2003 Jun 06
10
Philips Semiconductors
Product specification
GSM800 EDGE power module
NOTES
BGF844
2003 Jun 06
11
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/07/pp12
Date of release: 2003
Jun 06
Document order number:
9397 750 11507

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